電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)組制造(zao)商來說，針對(dui)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)供電(dian)(dian)(dian)(dian)系(xi)統構建安全且可靠(kao)的(de)(de)(de)產品是至關(guan)重要的(de)(de)(de)。電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)包(bao)中的(de)(de)(de)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)管(guan)理(li)(li)電(dian)(dian)(dian)(dian)路(lu)可以監控(kong)鋰(li)離(li)子(zi)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)運(yun)行(xing)狀(zhuang)態(tai)，包(bao)括了電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)阻抗(kang)、溫(wen)度(du)、單(dan)元電(dian)(dian)(dian)(dian)壓、充電(dian)(dian)(dian)(dian)和(he)放電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)流以及充電(dian)(dian)(dian)(dian)狀(zhuang)態(tai)等(deng)，以為(wei)系(xi)統提(ti)供詳細的(de)(de)(de)剩(sheng)余運(yun)轉時間和(he)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)健康(kang)狀(zhuang)況信息，確保(bao)系(xi)統作(zuo)出正(zheng)確的(de)(de)(de)決策。此外(wai)，為(wei)了改進電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)安全性(xing)能(neng)，即使(shi)只有一種(zhong)故障發生(sheng)，例如過電(dian)(dian)(dian)(dian)流、短(duan)路(lu)、單(dan)元和(he)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)包(bao)的(de)(de)(de)電(dian)(dian)(dian)(dian)壓過高、溫(wen)度(du)過高等(deng)，系(xi)統也會(hui)關(guan)閉兩個和(he)鋰(li)離(li)子(zi)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)串(chuan)聯的(de)(de)(de)背(bei)(bei)靠(kao)背(bei)(bei)（back-to-back）保(bao)護(hu)MOSFET，將電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元斷開。基于阻抗(kang)跟蹤技術的(de)(de)(de)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)管(guan)理(li)(li)單(dan)元（BMS）會(hui)在(zai)整個電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)使(shi)用周(zhou)期內(nei)監控(kong)單(dan)元阻抗(kang)和(he)電(dian)(dian)(dian)(dian)壓失衡，并(bing)有可能(neng)檢測(ce)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)微(wei)小短(duan)路(lu)（micro-short），防止電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元造(zao)成(cheng)火災乃至爆炸。

鋰離子電池安全

       過高的工作溫度將加速電池的老化，并可能導致鋰離子電池包的熱失控（thermal run-away）及爆炸。對于鋰離子電池高度活性化的含能材料來說，這一點是備受關注的。大電流的過度充電及短路都有可能造成電池溫度的快速上升。鋰離子電池過度充電(dian)期(qi)間(jian)，活躍得(de)金屬鋰(li)沉積在(zai)電(dian)池的正(zheng)極，其材料(liao)(liao)極大的增加了爆炸(zha)的危險性，因為鋰(li)將有可能與多種(zhong)材料(liao)(liao)起反應(ying)而爆炸(zha)，包括了電(dian)解(jie)液及陰極材料(liao)(liao)。例如，鋰(li)/碳插層混(hun)合(he)物（intercalated compound）與水(shui)發(fa)生(sheng)反應(ying)，并釋放(fang)出氫氣，氫氣有可能被反應(ying)放(fang)熱所(suo)引(yin)燃。陰極材料(liao)(liao)，諸如LiCoO2，在(zai)溫(wen)度超過175℃的熱失控溫(wen)度限（4.3V單元電(dian)壓(ya)）時，也將開始與電(dian)解(jie)液發(fa)生(sheng)反應(ying)。

      鋰離子(zi)電(dian)(dian)(dian)(dian)(dian)池使(shi)用很(hen)薄的(de)(de)(de)(de)(de)(de)微孔膜（micro-porous film）材(cai)(cai)料，例(li)如聚(ju)烯(xi)烴(jing)(jing)，進(jin)行電(dian)(dian)(dian)(dian)(dian)池正負極(ji)的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)子(zi)隔離，因(yin)為(wei)此(ci)類材(cai)(cai)料具有卓(zhuo)越(yue)的(de)(de)(de)(de)(de)(de)力學(xue)性能(neng)、化學(xue)穩定(ding)性以及可(ke)接(jie)受的(de)(de)(de)(de)(de)(de)價格。聚(ju)烯(xi)烴(jing)(jing)的(de)(de)(de)(de)(de)(de)熔點(dian)(dian)范圍(wei)較低，為(wei)135℃至 165℃，使(shi)得聚(ju)烯(xi)烴(jing)(jing)適用于作(zuo)為(wei)熱保(bao)險（fuse）材(cai)(cai)料。隨(sui)著溫度的(de)(de)(de)(de)(de)(de)升高并達到聚(ju)合體的(de)(de)(de)(de)(de)(de)熔點(dian)(dian)，材(cai)(cai)料的(de)(de)(de)(de)(de)(de)多(duo)孔性將失效(xiao)(xiao)，其目的(de)(de)(de)(de)(de)(de)是使(shi)得鋰離子(zi)無(wu)法在(zai)電(dian)(dian)(dian)(dian)(dian)極(ji)之間(jian)流動，從而關斷電(dian)(dian)(dian)(dian)(dian)池。同時，熱敏陶瓷（PCT）設備以及安全排出口（safety vent）為(wei)鋰離子(zi)電(dian)(dian)(dian)(dian)(dian)池提供了(le)額外的(de)(de)(de)(de)(de)(de)保(bao)護。電(dian)(dian)(dian)(dian)(dian)池的(de)(de)(de)(de)(de)(de)外殼，一般作(zuo)為(wei)負極(ji)接(jie)線端(duan)，通常(chang)為(wei)典型的(de)(de)(de)(de)(de)(de)鍍(du)鎳(nie)金屬板。在(zai)殼體密封的(de)(de)(de)(de)(de)(de)情況(kuang)下，金屬微粒將可(ke)能(neng)污染電(dian)(dian)(dian)(dian)(dian)池的(de)(de)(de)(de)(de)(de)內部(bu)。隨(sui)著時間(jian)的(de)(de)(de)(de)(de)(de)推移(yi)，微粒有可(ke)能(neng)遷移(yi)至隔離器(qi)，并使(shi)得電(dian)(dian)(dian)(dian)(dian)池陽極(ji)與(yu)陰極(ji)之間(jian)的(de)(de)(de)(de)(de)(de)絕緣層(ceng)老化。而陽極(ji)與(yu)陰極(ji)之間(jian)的(de)(de)(de)(de)(de)(de)微小短(duan)路(lu)將允許(xu)電(dian)(dian)(dian)(dian)(dian)子(zi)肆意(yi)的(de)(de)(de)(de)(de)(de)流動，并最(zui)終使(shi)電(dian)(dian)(dian)(dian)(dian)池失效(xiao)(xiao)。絕大多(duo)數情況(kuang)下，此(ci)類失效(xiao)(xiao)等同于電(dian)(dian)(dian)(dian)(dian)池無(wu)法供電(dian)(dian)(dian)(dian)(dian)且功能(neng)完全終止。在(zai)少數情況(kuang)下，電(dian)(dian)(dian)(dian)(dian)池有可(ke)能(neng)過熱、熔斷、著火乃至爆炸。這就是近期所報道的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)池故障的(de)(de)(de)(de)(de)(de)主要根源，并使(shi)得眾(zhong)多(duo)的(de)(de)(de)(de)(de)(de)廠商不(bu)(bu)得不(bu)(bu)將其產(chan)品召回(hui)。

電池管理單元（BMS）以及電池保護

      電(dian)池(chi)(chi)材料的(de)(de)(de)不斷開(kai)發提升了熱(re)失控的(de)(de)(de)上限(xian)溫度。另一(yi)方面，雖然電(dian)池(chi)(chi)必須通過(guo)嚴(yan)格的(de)(de)(de)UL安全測試，例如UL1642，但(dan)提供(gong)正確的(de)(de)(de)充電(dian)狀態并(bing)很好的(de)(de)(de)應(ying)對多種(zhong)有(you)(you)可能出現的(de)(de)(de)電(dian)子原件故障仍(reng)然是系統設計人員的(de)(de)(de)職責所(suo)在。過(guo)電(dian)壓、過(guo)電(dian)流、短(duan)路、過(guo)熱(re)狀態以(yi)及外(wai)部分立元件的(de)(de)(de)故障都有(you)(you)可能引起電(dian)池(chi)(chi)突變(bian)的(de)(de)(de)失效。這就意味著需要采(cai)取多重的(de)(de)(de)保護――在同一(yi)電(dian)池(chi)(chi)包(bao)內(nei)具(ju)有(you)(you)至少(shao)兩(liang)個獨立的(de)(de)(de)保護電(dian)路或機制。同時，還希望具(ju)備用于檢測電(dian)池(chi)(chi)內(nei)部微(wei)小短(duan)路的(de)(de)(de)電(dian)子電(dian)路以(yi)避免電(dian)池(chi)(chi)故障。

     電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)設計用(yong)于(yu)(yu)(yu)精確的(de)(de)指示可(ke)用(yong)的(de)(de)鋰離子電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)。該電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)獨特的(de)(de)算法允(yun)(yun)許實(shi)(shi)時(shi)的(de)(de)追蹤電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)包的(de)(de)蓄電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)變化、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)阻(zu)抗(kang)、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流、溫(wen)(wen)度(du)(du)以(yi)及(ji)其(qi)它(ta)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)信息。電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計自(zi)動(dong)的(de)(de)計算充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)及(ji)放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)的(de)(de)速(su)率(lv)、自(zi)放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)以(yi)及(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元老化，在(zai)(zai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)使用(yong)壽命期(qi)限(xian)內實(shi)(shi)現了高(gao)(gao)(gao)精度(du)(du)的(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計量(liang)(liang)。例如(ru)(ru)，一系列(lie)專利的(de)(de)阻(zu)抗(kang)追蹤電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計，包括bq20z70，bq20z80以(yi)及(ji)bq20z90，均可(ke)在(zai)(zai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)壽命期(qi)限(xian)內提供(gong)高(gao)(gao)(gao)達1%精度(du)(du)的(de)(de)計量(liang)(liang)。單(dan)個熱敏(min)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)被用(yong)于(yu)(yu)(yu)監(jian)測鋰離子電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)溫(wen)(wen)度(du)(du)，以(yi)實(shi)(shi)現電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元的(de)(de)過(guo)熱保護，并用(yong)于(yu)(yu)(yu)充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)及(ji)放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)限(xian)定(ding)。例如(ru)(ru)，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元一般(ban)不(bu)(bu)允(yun)(yun)許在(zai)(zai)低于(yu)(yu)(yu)0℃或高(gao)(gao)(gao)于(yu)(yu)(yu)45℃的(de)(de)溫(wen)(wen)度(du)(du)范圍內充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，且(qie)不(bu)(bu)允(yun)(yun)許在(zai)(zai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元溫(wen)(wen)度(du)(du)高(gao)(gao)(gao)于(yu)(yu)(yu)65℃時(shi)放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)。如(ru)(ru)檢測到過(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓、過(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流或過(guo)熱狀態，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計IC將指令控制(zhi)AFE關閉(bi)充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)及(ji)放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOSFET Q1及(ji)Q2。當檢測到電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)欠壓（under-voltage）狀態時(shi)，則(ze)將指令控制(zhi)AFE關閉(bi)放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOSFET Q2，且(qie)同時(shi)保持(chi)充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOSFET開(kai)啟，以(yi)允(yun)(yun)許電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)。

     AFE的主要任務是對過(guo)載、短路(lu)的檢(jian)(jian)測(ce)，并保護充電(dian)(dian)及(ji)放電(dian)(dian)MOSFET、電(dian)(dian)池(chi)單元以及(ji)其它線路(lu)上的元件，避免過(guo)電(dian)(dian)流(liu)(liu)狀(zhuang)態。過(guo)載檢(jian)(jian)測(ce)用(yong)于檢(jian)(jian)測(ce)電(dian)(dian)池(chi)放電(dian)(dian)流(liu)(liu)向(xiang)上的過(guo)電(dian)(dian)流(liu)(liu)（OC），同(tong)時，短路(lu)（SC）檢(jian)(jian)測(ce)用(yong)于檢(jian)(jian)測(ce)充電(dian)(dian)及(ji)放電(dian)(dian)流(liu)(liu)向(xiang)上的過(guo)電(dian)(dian)流(liu)(liu)。AFE電(dian)(dian)路(lu)的過(guo)載和短路(lu)限定(ding)以及(ji)延(yan)遲(chi)時間均可通(tong)過(guo)電(dian)(dian)量計數據閃存編程設(she)定(ding)。當檢(jian)(jian)測(ce)到(dao)過(guo)載或短路(lu)狀(zhuang)態，且達到(dao)了程序設(she)定(ding)的延(yan)遲(chi)時間，則充電(dian)(dian)及(ji)放電(dian)(dian)MOSFET Q1及(ji)Q2將(jiang)被(bei)關閉，詳(xiang)細的狀(zhuang)態信息將(jiang)存儲于AFE的狀(zhuang)態寄(ji)存器，從(cong)而電(dian)(dian)量計可讀取(qu)并調查導致故障的原因(yin)。

對于計量2、3或4個鋰離子電池包(bao)的(de)(de)(de)(de)(de)(de)電(dian)(dian)量(liang)計芯片(pian)集(ji)解(jie)決方案來(lai)說，AFE起了(le)很重要的(de)(de)(de)(de)(de)(de)作用。AFE提供了(le)所需的(de)(de)(de)(de)(de)(de)所有高壓接口以及硬(ying)件電(dian)(dian)流(liu)保(bao)護特性。所提供的(de)(de)(de)(de)(de)(de)I2C兼容接口允許電(dian)(dian)量(liang)計訪問(wen)AFE寄存器(qi)并配置AFE的(de)(de)(de)(de)(de)(de)保(bao)護特性。AFE還集(ji)成了(le)電(dian)(dian)池單(dan)(dan)(dan)元(yuan)(yuan)(yuan)平(ping)衡控制。多數情(qing)況下，在多單(dan)(dan)(dan)元(yuan)(yuan)(yuan)電(dian)(dian)池包(bao)中，每(mei)(mei)個獨立電(dian)(dian)池單(dan)(dan)(dan)元(yuan)(yuan)(yuan)的(de)(de)(de)(de)(de)(de)電(dian)(dian)荷(he)狀態（SOC）彼此(ci)不(bu)(bu)同(tong)，從而導致了(le)不(bu)(bu)平(ping)衡單(dan)(dan)(dan)元(yuan)(yuan)(yuan)間的(de)(de)(de)(de)(de)(de)電(dian)(dian)壓差別。AFE針對每(mei)(mei)一(yi)的(de)(de)(de)(de)(de)(de)電(dian)(dian)池單(dan)(dan)(dan)元(yuan)(yuan)(yuan)整合(he)了(le)旁通通路。此(ci)類旁通通路可用于降低至每(mei)(mei)一(yi)單(dan)(dan)(dan)元(yuan)(yuan)(yuan)的(de)(de)(de)(de)(de)(de)充電(dian)(dian)電(dian)(dian)流(liu)，從而為電(dian)(dian)池單(dan)(dan)(dan)元(yuan)(yuan)(yuan)充電(dian)(dian)期間的(de)(de)(de)(de)(de)(de)SOC平(ping)衡提供了(le)條件。基于阻抗(kang)追蹤電(dian)(dian)量(liang)計對每(mei)(mei)一(yi)電(dian)(dian)池單(dan)(dan)(dan)元(yuan)(yuan)(yuan)化學(xue)電(dian)(dian)荷(he)狀態的(de)(de)(de)(de)(de)(de)確(que)定(ding)，可在需要單(dan)(dan)(dan)元(yuan)(yuan)(yuan)平(ping)衡時做(zuo)出正確(que)的(de)(de)(de)(de)(de)(de)決策。

       具(ju)有不同激活時間的(de)多(duo)極過電(dian)流(liu)保(bao)護(hu)(hu)限（如圖2所(suo)示(shi)）使得電(dian)池包保(bao)護(hu)(hu)更(geng)為強健。電(dian)量(liang)計(ji)具(ju)有兩層(ceng)的(de)充電(dian)/放電(dian)過電(dian)流(liu)保(bao)護(hu)(hu)設定，而AFE則提供了第三(san)層(ceng)的(de)放電(dian)過電(dian)流(liu)保(bao)護(hu)(hu)。在短路(lu)狀態下(xia)，MOSFET及電(dian)池可(ke)能在數秒內(nei)毀壞，電(dian)量(liang)計(ji)芯片(pian)集完全依靠AFE來(lai)自動的(de)關斷MOSFET，以免產生毀壞。

當電(dian)(dian)(dian)(dian)量(liang)計(ji)IC及其所關聯的(de)(de)(de)AFE提(ti)(ti)供過(guo)(guo)電(dian)(dian)(dian)(dian)壓保護(hu)(hu)時，電(dian)(dian)(dian)(dian)壓監測(ce)的(de)(de)(de)采樣特性限(xian)制了此(ci)類保護(hu)(hu)系統的(de)(de)(de)響(xiang)應(ying)時間(jian)。絕(jue)大多數應(ying)用要求能快速響(xiang)應(ying)，且實(shi)時、獨立(li)(li)的(de)(de)(de)過(guo)(guo)電(dian)(dian)(dian)(dian)壓監測(ce)器，并(bing)與電(dian)(dian)(dian)(dian)量(liang)計(ji)、AFE協同運作。該監測(ce)器獨立(li)(li)于電(dian)(dian)(dian)(dian)量(liang)計(ji)及AFE，監測(ce)每一電(dian)(dian)(dian)(dian)池(chi)單(dan)(dan)元的(de)(de)(de)電(dian)(dian)(dian)(dian)壓，并(bing)針對每一達(da)到(dao)硬(ying)件(jian)編碼過(guo)(guo)電(dian)(dian)(dian)(dian)壓限(xian)的(de)(de)(de)電(dian)(dian)(dian)(dian)池(chi)單(dan)(dan)元提(ti)(ti)供邏輯電(dian)(dian)(dian)(dian)平輸出。過(guo)(guo)電(dian)(dian)(dian)(dian)壓保護(hu)(hu)的(de)(de)(de)響(xiang)應(ying)時間(jian)取(qu)決于外部延遲電(dian)(dian)(dian)(dian)容的(de)(de)(de)大小(xiao)。在典型的(de)(de)(de)應(ying)用中，秒(miao)量(liang)級(ji)保護(hu)(hu)器的(de)(de)(de)輸出將觸(chu)發化(hua)學保險(xian)絲或其它失(shi)效(xiao)保護(hu)(hu)設備，以永久性的(de)(de)(de)將鋰離子電(dian)(dian)(dian)(dian)池(chi)與系統分離。

電(dian)(dian)池(chi)(chi)包(bao)永(yong)久性的(de)(de)(de)(de)失效(xiao)保(bao)(bao)(bao)護(hu)對于電(dian)(dian)池(chi)(chi)管理單(dan)元來說，很重要的(de)(de)(de)(de)一點是要為(wei)非正常狀態下(xia)的(de)(de)(de)(de)電(dian)(dian)池(chi)(chi)包(bao)提供趨于保(bao)(bao)(bao)守的(de)(de)(de)(de)關斷。永(yong)久性的(de)(de)(de)(de)失效(xiao)保(bao)(bao)(bao)護(hu)包(bao)括了過電(dian)(dian)流(liu)的(de)(de)(de)(de)放(fang)電(dian)(dian)及(ji)充(chong)(chong)電(dian)(dian)故(gu)(gu)(gu)障(zhang)(zhang)狀態下(xia)的(de)(de)(de)(de)安(an)全(quan)(quan)、過熱(re)的(de)(de)(de)(de)放(fang)電(dian)(dian)及(ji)充(chong)(chong)電(dian)(dian)狀態下(xia)的(de)(de)(de)(de)安(an)全(quan)(quan)、過電(dian)(dian)壓(ya)(ya)的(de)(de)(de)(de)故(gu)(gu)(gu)障(zhang)(zhang)狀態（峰值(zhi)電(dian)(dian)壓(ya)(ya)）以(yi)及(ji)電(dian)(dian)池(chi)(chi)平(ping)衡故(gu)(gu)(gu)障(zhang)(zhang)、短(duan)接放(fang)電(dian)(dian)FET故(gu)(gu)(gu)障(zhang)(zhang)、充(chong)(chong)電(dian)(dian)MOSFET故(gu)(gu)(gu)障(zhang)(zhang)狀態下(xia)的(de)(de)(de)(de)安(an)全(quan)(quan)。制造商(shang)可選擇任意組合(he)上述的(de)(de)(de)(de)永(yong)久性失效(xiao)保(bao)(bao)(bao)護(hu)。當檢測(ce)到(dao)任意的(de)(de)(de)(de)此(ci)類故(gu)(gu)(gu)障(zhang)(zhang)，則保(bao)(bao)(bao)護(hu)設(she)備將(jiang)熔斷化學保(bao)(bao)(bao)險(xian)絲，以(yi)使(shi)得電(dian)(dian)池(chi)(chi)包(bao)永(yong)久性的(de)(de)(de)(de)失效(xiao)。作(zuo)為(wei)電(dian)(dian)子元件故(gu)(gu)(gu)障(zhang)(zhang)的(de)(de)(de)(de)外部失效(xiao)驗證(zheng)，電(dian)(dian)池(chi)(chi)管理單(dan)元設(she)計用于檢測(ce)充(chong)(chong)電(dian)(dian)及(ji)放(fang)電(dian)(dian)MOSFET Q1及(ji)Q2的(de)(de)(de)(de)失效(xiao)與否。如果任意充(chong)(chong)電(dian)(dian)或放(fang)電(dian)(dian)MOSFET短(duan)路，則化學保(bao)(bao)(bao)險(xian)絲也將(jiang)熔斷。

      據報(bao)道，電(dian)(dian)(dian)池(chi)(chi)(chi)內(nei)(nei)部(bu)(bu)的(de)(de)(de)(de)微(wei)小短(duan)(duan)路(lu)(lu)(lu)也是(shi)導致近期多起(qi)電(dian)(dian)(dian)池(chi)(chi)(chi)召回的(de)(de)(de)(de)主要原因。如(ru)何檢測(ce)電(dian)(dian)(dian)池(chi)(chi)(chi)內(nei)(nei)部(bu)(bu)的(de)(de)(de)(de)微(wei)小短(duan)(duan)路(lu)(lu)(lu)并(bing)防止(zhi)電(dian)(dian)(dian)池(chi)(chi)(chi)著火(huo)乃至爆炸呢？外殼(ke)封閉處理過程中，金屬微(wei)粒及其它雜(za)質(zhi)有可(ke)能(neng)污染電(dian)(dian)(dian)池(chi)(chi)(chi)內(nei)(nei)部(bu)(bu)，從而(er)引(yin)起(qi)電(dian)(dian)(dian)池(chi)(chi)(chi)內(nei)(nei)部(bu)(bu)的(de)(de)(de)(de)微(wei)小短(duan)(duan)路(lu)(lu)(lu)。內(nei)(nei)部(bu)(bu)的(de)(de)(de)(de)微(wei)小短(duan)(duan)路(lu)(lu)(lu)將極大地增(zeng)加電(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)(de)自放電(dian)(dian)(dian)速率，使得開(kai)路(lu)(lu)(lu)電(dian)(dian)(dian)壓較(jiao)之正常(chang)狀態下的(de)(de)(de)(de)電(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元(yuan)(yuan)有所降低。阻抗追蹤電(dian)(dian)(dian)量(liang)計監測(ce)開(kai)路(lu)(lu)(lu)電(dian)(dian)(dian)壓，并(bing)從而(er)檢測(ce)電(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元(yuan)(yuan)的(de)(de)(de)(de)非均衡性――當不同(tong)電(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元(yuan)(yuan)的(de)(de)(de)(de)開(kai)路(lu)(lu)(lu)電(dian)(dian)(dian)壓差(cha)異超過預先設置的(de)(de)(de)(de)限定值。當出現此類失效時，將產生(sheng)永久(jiu)性失效的(de)(de)(de)(de)告警并(bing)斷開(kai)MOSFET，化學保險(xian)絲也可(ke)配置為熔斷。上述行為將使得電(dian)(dian)(dian)池(chi)(chi)(chi)包(bao)無法作為供電(dian)(dian)(dian)源并(bing)因此屏蔽了電(dian)(dian)(dian)池(chi)(chi)(chi)包(bao)內(nei)(nei)部(bu)(bu)的(de)(de)(de)(de)微(wei)小短(duan)(duan)路(lu)(lu)(lu)電(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元(yuan)(yuan)，從而(er)防止(zhi)了災害的(de)(de)(de)(de)發生(sheng)。

小結

電(dian)(dian)池(chi)(chi)管(guan)理單(dan)(dan)元對于(yu)確保終端(duan)用戶的安(an)全性(xing)是至關重要的。強健的多極(ji)保護――過(guo)電(dian)(dian)壓、過(guo)電(dian)(dian)流、過(guo)熱、電(dian)(dian)池(chi)(chi)單(dan)(dan)元非均衡以及(ji)MOSFET失效監測，極(ji)大地改善了(le)電(dian)(dian)池(chi)(chi)包(bao)的安(an)全性(xing)。通過(guo)監測電(dian)(dian)池(chi)(chi)單(dan)(dan)元的開環電(dian)(dian)壓，阻抗(kang)追蹤技術可檢測電(dian)(dian)池(chi)(chi)內部的微小短路，并(bing)進而永久性(xing)的失效電(dian)(dian)池(chi)(chi)，確保了(le)終端(duan)用戶的安(an)全。