電(dian)(dian)(dian)池(chi)(chi)芯容量的(de)(de)(de)多種化學(xue)類型電(dian)(dian)(dian)池(chi)(chi)充(chong)(chong)電(dian)(dian)(dian)時(shi)(shi)，在不同的(de)(de)(de)充(chong)(chong)電(dian)(dian)(dian)階段上，電(dian)(dian)(dian)池(chi)(chi)電(dian)(dian)(dian)壓(ya)可能會高于(yu)或低于(yu)電(dian)(dian)(dian)源電(dian)(dian)(dian)壓(ya)。因此(ci)，需要(yao)(yao)對(dui)電(dian)(dian)(dian)源電(dian)(dian)(dian)壓(ya)做升(sheng)壓(ya)或降(jiang)壓(ya)，以配合電(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)電(dian)(dian)(dian)壓(ya)。例如(ru)，當為(wei)(wei)一(yi)個(ge)(ge)典(dian)型電(dian)(dian)(dian)壓(ya)為(wei)(wei)1.25V的(de)(de)(de)單(dan)芯NiMH（鎳金屬）電(dian)(dian)(dian)池(chi)(chi)充(chong)(chong)電(dian)(dian)(dian)時(shi)(shi)，必須對(dui)3.3V的(de)(de)(de)電(dian)(dian)(dian)源做衰減或降(jiang)壓(ya)。當要(yao)(yao)為(wei)(wei)一(yi)個(ge)(ge)單(dan)芯4.1V鋰離子電(dian)(dian)(dian)池(chi)(chi)充(chong)(chong)電(dian)(dian)(dian)時(shi)(shi)，輸入電(dian)(dian)(dian)壓(ya)需要(yao)(yao)做升(sheng)壓(ya)。為(wei)(wei)解決這(zhe)些問題，應用一(yi)種SEPIC（單(dan)端初級電(dian)(dian)(dian)感(gan)轉換器）作為(wei)(wei)主充(chong)(chong)電(dian)(dian)(dian)路徑。這(zhe)種開關模(mo)式的(de)(de)(de)DC/DC轉換結構可以同時(shi)(shi)在某個(ge)(ge)電(dian)(dian)(dian)壓(ya)區間內完成升(sheng)降(jiang)壓(ya)工(gong)作，從而提供了電(dian)(dian)(dian)源電(dian)(dian)(dian)壓(ya)的(de)(de)(de)靈活性。

　　鋰離子與NiMH化(hua)學(xue)(xue)類(lei)型(xing)需要不同的(de)(de)充(chong)(chong)電曲(qu)線，但一(yi)個靈活的(de)(de)充(chong)(chong)電架構可以方(fang)便地用(yong)(yong)于兩種(zhong)情況。較為靈活與簡(jian)(jian)便的(de)(de)實現(xian)方(fang)式是，用(yong)(yong)微(wei)控制器(qi)上的(de)(de)固件，從一(yi)種(zhong)化(hua)學(xue)(xue)類(lei)型(xing)切換到另一(yi)種(zhong)類(lei)型(xing)。如(ru)果(guo)設(she)計(ji)(ji)一(yi)種(zhong)模(mo)塊(kuai)(kuai)化(hua)的(de)(de)充(chong)(chong)電子系統，并將各種(zhong)功(gong)能(neng)封(feng)裝到各個模(mo)塊(kuai)(kuai)中(zhong)，就可以根據系統需求，使(shi)用(yong)(yong)某個系列中(zhong)的(de)(de)不同微(wei)控制器(qi)，實現(xian)相(xiang)同的(de)(de)應用(yong)(yong)。模(mo)塊(kuai)(kuai)化(hua)的(de)(de)使(shi)用(yong)(yong)簡(jian)(jian)化(hua)了(le)設(she)計(ji)(ji)，開(kai)發人員(yuan)就能(neng)夠為其它主要應用(yong)(yong)增加電池充(chong)(chong)電功(gong)能(neng)，如(ru)電機控制與醫療測(ce)量等(deng)。

　　在(zai)控(kong)制(zhi)(zhi)充電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)流(liu)時(shi)，電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)充電(dian)(dian)(dian)(dian)(dian)器必須要確(que)定(ding)出電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)、電(dian)(dian)(dian)(dian)(dian)流(liu)與溫(wen)度(du)。確(que)定(ding)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)狀態的(de)(de)硬件對所(suo)有電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)類型都(dou)是共(gong)同(tong)的(de)(de)，電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)電(dian)(dian)(dian)(dian)(dian)壓(ya)可(ke)(ke)(ke)以(yi)(yi)(yi)高(gao)于或低于微控(kong)制(zhi)(zhi)器的(de)(de)輸(shu)入范圍。因此，工程師們一(yi)般都(dou)會用(yong)(yong)(yong)一(yi)個電(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)分(fen)壓(ya)電(dian)(dian)(dian)(dian)(dian)路測(ce)量電(dian)(dian)(dian)(dian)(dian)壓(ya)，做電(dian)(dian)(dian)(dian)(dian)壓(ya)衰減。他們可(ke)(ke)(ke)以(yi)(yi)(yi)測(ce)量高(gao)側的(de)(de)電(dian)(dian)(dian)(dian)(dian)流(liu)，即進入電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)電(dian)(dian)(dian)(dian)(dian)流(liu)；也可(ke)(ke)(ke)以(yi)(yi)(yi)測(ce)量低側的(de)(de)電(dian)(dian)(dian)(dian)(dian)流(liu)，即離(li)開電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)電(dian)(dian)(dian)(dian)(dian)流(liu)；或者(zhe)，在(zai)SEPIC情況下(xia)，可(ke)(ke)(ke)以(yi)(yi)(yi)在(zai)電(dian)(dian)(dian)(dian)(dian)感的(de)(de)次級端使用(yong)(yong)(yong)一(yi)只電(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)。電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)通常都(dou)內嵌有熱敏(min)電(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)，可(ke)(ke)(ke)以(yi)(yi)(yi)用(yong)(yong)(yong)于監控(kong)和確(que)保電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)溫(wen)度(du)的(de)(de)精度(du)。有些(xie)商(shang)用(yong)(yong)(yong)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)制(zhi)(zhi)造商(shang)為降(jiang)低成本而省(sheng)略(lve)了這些(xie)熱敏(min)電(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)。這種情況下(xia)，用(yong)(yong)(yong)戶可(ke)(ke)(ke)以(yi)(yi)(yi)外接(jie)(jie)一(yi)只熱敏(min)電(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)，并(bing)使之與電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)接(jie)(jie)觸(chu)。

　　采用這(zhe)些測量參數，微控制器(qi)就能(neng)確定(ding)并(bing)控制進入(ru)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)。從電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)器(qi)的(de)角度來說，不同(tong)化(hua)學類型之間的(de)主要區(qu)別就是充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)曲線（圖1）。鋰(li)離(li)子電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)采用的(de)是恒(heng)流(liu)恒(heng)壓(ya)(ya)的(de)充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)曲線。如果電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)在(zai)(zai)(zai)啟動時低于恒(heng)流(liu)閾值(zhi)(zhi)，則(ze)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)器(qi)會(hui)以(yi)少(shao)量電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)供電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，大約(yue)為(wei)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)容量的(de)10%。在(zai)(zai)(zai)這(zhe)個(ge)預處理階段，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)會(hui)隨著充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)而逐步增加。當電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)達(da)到(dao)(dao)快充(chong)(chong)(chong)閾值(zhi)(zhi)時，微控制器(qi)將充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)增加到(dao)(dao)約(yue)為(wei)100%容量。這(zhe)個(ge)恒(heng)流(liu)階段一直保持下(xia)去，直到(dao)(dao)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)達(da)到(dao)(dao)規定(ding)的(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)值(zhi)(zhi)。然后，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)器(qi)進入(ru)恒(heng)壓(ya)(ya)階段，在(zai)(zai)(zai)此期間，充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)減小，同(tong)時電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)保持在(zai)(zai)(zai)規定(ding)的(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)值(zhi)(zhi)。當電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)降(jiang)低到(dao)(dao)終止電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)時，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)保持不變，而電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)過程終止。

                                          圖1，從電池充電器的角度，鋰離子電池化學類型(a)與NiMH電池化學類型(b) 之間的主要差異是充電曲線。

　　在充電期間，電池中的電流隨溫度的變化而變化。如果有任何電池狀態參數（電壓、電流或溫度）超出了相應電池充電階段所規定的范圍，則電池充電器會停止充電做保護。

　　NiMH電(dian)(dian)(dian)池的(de)(de)前兩(liang)個(ge)充(chong)(chong)電(dian)(dian)(dian)階(jie)段(duan)(duan)與鋰(li)離(li)子電(dian)(dian)(dian)池類似(si)，即(ji)：20%容(rong)量的(de)(de)激活段(duan)(duan)，以及100%容(rong)量的(de)(de)恒流(liu)段(duan)(duan)。電(dian)(dian)(dian)壓下(xia)跌(die)(die)與溫(wen)度下(xia)跌(die)(die)表明(ming)了NiMH電(dian)(dian)(dian)池的(de)(de)恒流(liu)段(duan)(duan)結束，而(er)電(dian)(dian)(dian)流(liu)保持恒定(ding)。在這次電(dian)(dian)(dian)壓下(xia)跌(die)(die)后，NiMH充(chong)(chong)電(dian)(dian)(dian)器的(de)(de)充(chong)(chong)電(dian)(dian)(dian)曲線進入了充(chong)(chong)電(dian)(dian)(dian)完成階(jie)段(duan)(duan)，在此(ci)期間，電(dian)(dian)(dian)流(liu)降低到(dao)約5%容(rong)量的(de)(de)涓流(liu)水平。這一階(jie)段(duan)(duan)提(ti)供一個(ge)恒定(ding)時(shi)間的(de)(de)小(xiao)充(chong)(chong)電(dian)(dian)(dian)電(dian)(dian)(dian)流(liu)，直到(dao)充(chong)(chong)電(dian)(dian)(dian)終止(zhi)。

　使用這(zhe)些充(chong)(chong)電(dian)(dian)(dian)需求，就可(ke)以將電(dian)(dian)(dian)池(chi)充(chong)(chong)電(dian)(dian)(dian)過(guo)程簡化(hua)為(wei)不同(tong)的(de)(de)(de)(de)水平，方(fang)法是(shi)用一個(ge)預先(xian)定(ding)義了電(dian)(dian)(dian)壓、電(dian)(dian)(dian)流、溫度(du)和超時(shi)等數值的(de)(de)(de)(de)狀(zhuang)態(tai)機。微控(kong)制(zhi)器的(de)(de)(de)(de)狀(zhuang)態(tai)機控(kong)制(zhi)著電(dian)(dian)(dian)池(chi)的(de)(de)(de)(de)狀(zhuang)態(tai)，以及充(chong)(chong)電(dian)(dian)(dian)所需要(yao)的(de)(de)(de)(de)電(dian)(dian)(dian)流量。圖2是(shi)一個(ge)可(ke)為(wei)這(zhe)兩種(zhong)電(dian)(dian)(dian)池(chi)充(chong)(chong)電(dian)(dian)(dian)的(de)(de)(de)(de)簡化(hua)的(de)(de)(de)(de)狀(zhuang)態(tai)機。

                                                圖2，一個預先確定了電壓、電流、溫度和超時數值的狀態機，可以簡化鋰離子電池和NiMH電池的充電曲線。

　　根據所選(xuan)擇的(de)電(dian)(dian)池化學類型，微(wei)(wei)控(kong)制(zhi)器(qi)(qi)會檢查(cha)電(dian)(dian)池的(de)狀(zhuang)態(tai)機，控(kong)制(zhi)充(chong)電(dian)(dian)電(dian)(dian)流(liu)。電(dian)(dian)池充(chong)電(dian)(dian)的(de)曲線(xian)可以有預(yu)編程(cheng)、啟動前或自(zi)動決(jue)定三種形(xing)式。對于前兩(liang)種方式，微(wei)(wei)控(kong)制(zhi)器(qi)(qi)會從用(yong)戶(hu)的(de)輸入獲得(de)電(dian)(dian)池類型。對預(yu)編程(cheng)情況，模(mo)塊(kuai)軟(ruan)件會選(xuan)擇充(chong)電(dian)(dian)電(dian)(dian)池的(de)類型，用(yong)所需曲線(xian)為微(wei)(wei)控(kong)制(zhi)器(qi)(qi)編程(cheng)。這(zhe)種決(jue)策方式適用(yong)于那(nei)些充(chong)電(dian)(dian)是(shi)附加功能的(de)應用(yong)。在這(zhe)些應用(yong)中，電(dian)(dian)池類型是(shi)已知的(de)。

　　在(zai)(zai)啟(qi)動(dong)前方(fang)式中，微(wei)(wei)控(kong)(kong)(kong)制(zhi)器(qi)會做(zuo)(zuo)一個附加(jia)檢(jian)查(cha)，這種檢(jian)查(cha)可以簡單到在(zai)(zai)啟(qi)動(dong)時(shi)由微(wei)(wei)控(kong)(kong)(kong)制(zhi)器(qi)檢(jian)查(cha)開關的(de)(de)位置，從而確定電(dian)池(chi)的(de)(de)充電(dian)曲線與(yu)選(xuan)(xuan)擇。對于自動(dong)檢(jian)查(cha)方(fang)式，微(wei)(wei)控(kong)(kong)(kong)制(zhi)器(qi)會在(zai)(zai)啟(qi)動(dong)后自動(dong)地做(zuo)(zuo)出決(jue)策，通過檢(jian)測電(dian)池(chi)的(de)(de)類型而選(xuan)(xuan)擇電(dian)池(chi)充電(dian)曲線。例如，一只(zhi)單芯NiMH電(dian)池(chi)的(de)(de)典型電(dian)壓(ya)范圍(wei)為(wei)0.9V~1.25V，而一個鋰離子電(dian)池(chi)芯的(de)(de)電(dian)壓(ya)范圍(wei)為(wei)2.7V~4.2V。同樣(yang)，不同電(dian)池(chi)的(de)(de)溫(wen)度(du)范圍(wei)也有(you)差異，微(wei)(wei)控(kong)(kong)(kong)制(zhi)器(qi)可以在(zai)(zai)啟(qi)動(dong)時(shi)保存和比較這些(xie)數值。自動(dong)檢(jian)查(cha)方(fang)案(an)只(zhi)能用(yong)于某(mou)些(xie)情況。一般(ban)來說(shuo)，預(yu)編程與(yu)啟(qi)動(dong)前方(fang)法可用(yong)于大多(duo)數應用(yong)。本文主要討(tao)論預(yu)編程決(jue)策，面向(xiang)那(nei)些(xie)電(dian)池(chi)充電(dian)是附加(jia)功(gong)能的(de)(de)應用(yong)。

　　兩種化學類型都使用了相同的硬件，用于電池充電器的(de)(de)檢測(ce)與控(kong)制(zhi)（圖3）。要(yao)確定(ding)電(dian)(dian)池(chi)的(de)(de)狀態(tai)，就要(yao)將電(dian)(dian)壓(ya)、電(dian)(dian)流(liu)和(he)溫度以多工方式(shi)輸(shu)入到(dao)(dao)微控(kong)制(zhi)器(qi)中的(de)(de)一(yi)只ADC，完成測(ce)量(liang)。固(gu)件(jian)(jian)使(shi)用這(zhe)(zhe)些數(shu)值(zhi)確定(ding)出狀態(tai)，通過(guo)改變PWM（脈(mo)沖寬度調(diao)制(zhi)器(qi)）的(de)(de)占(zhan)空比(bi)而(er)控(kong)制(zhi)充(chong)電(dian)(dian)電(dian)(dian)流(liu)。PWM的(de)(de)輸(shu)出連接到(dao)(dao)SEPIC中MOSFET的(de)(de)柵極(ji)上，控(kong)制(zhi)流(liu)經電(dian)(dian)池(chi)的(de)(de)電(dian)(dian)流(liu)。這(zhe)(zhe)些步驟都與CPU有關(guan)，因此會有一(yi)些延遲(chi)。有些電(dian)(dian)池(chi)（包括鋰(li)離子電(dian)(dian)池(chi)芯）對(dui)過(guo)充(chong)很敏感，在較(jiao)高電(dian)(dian)壓(ya)下會變得不穩定(ding)。比(bi)較(jiao)器(qi)增加了(le)防止(zhi)過(guo)壓(ya)和(he)過(guo)流(liu)狀況的(de)(de)硬件(jian)(jian)保護電(dian)(dian)路。這(zhe)(zhe)些比(bi)較(jiao)器(qi)會在必要(yao)時中止(zhi)充(chong)電(dian)(dian)，直(zhi)到(dao)(dao)用戶將其復位，或電(dian)(dian)池(chi)回到(dao)(dao)安全的(de)(de)狀況下。

                                                             圖3，微控制器根據所選擇電池的化學類型，用電池的狀態機控制充電電流。

　　兩種化(hua)學類型下，用于檢(jian)測和控(kong)制電池充電的外部硬件(jian)是相同的。

根(gen)據測得的(de)(de)參數值以及電池的(de)(de)化學(xue)類型，CPU確(que)定(ding)(ding)出(chu)電池的(de)(de)狀態，并相應(ying)地改變PWM占(zhan)空比。按傳(chuan)統方法，CPU用于確(que)定(ding)(ding)充電曲線的(de)(de)條件都是代碼中的(de)(de)常數，程序員要手(shou)工(gong)修改它們(men)（代碼清單(dan)1）。

　　當需要修改充(chong)(chong)電(dian)曲(qu)線(xian)(xian)(xian)時，將電(dian)池(chi)(chi)充(chong)(chong)電(dian)曲(qu)線(xian)(xian)(xian)設為0或1，可在(zai)兩個充(chong)(chong)電(dian)曲(qu)線(xian)(xian)(xian)之間(jian)做切換。程(cheng)序將針對(dui)所有狀(zhuang)態的(de)(de)電(dian)壓、電(dian)流和溫度(du)極限保存為常數(shu)，并做相應(ying)的(de)(de)修改。如果某(mou)種(zhong)電(dian)池(chi)(chi)類(lei)型需要不(bu)同的(de)(de)電(dian)壓水平，則必須修改代(dai)碼，輸入新的(de)(de)參數(shu)，這意味著應(ying)用(yong)的(de)(de)用(yong)戶必須了(le)解修改充(chong)(chong)電(dian)曲(qu)線(xian)(xian)(xian)的(de)(de)代(dai)碼，以(yi)及電(dian)池(chi)(chi)充(chong)(chong)電(dian)的(de)(de)限制條件(jian)。而采用(yong)模塊(kuai)化方案后，當選擇了(le)相應(ying)的(de)(de)IP（智能產權）塊(kuai)時，就可以(yi)輸入用(yong)于修改電(dian)池(chi)(chi)充(chong)(chong)電(dian)器(qi)曲(qu)線(xian)(xian)(xian)的(de)(de)參數(shu)。圖4給出(chu)了(le)鋰離子電(dian)池(chi)(chi)與NiMH電(dian)池(chi)(chi)的(de)(de)模塊(kuai)參數(shu)。

                                                           圖4，通過圖形用戶界面，輸入電池化學類型的參數極限值。

使用(yong)(yong)這(zhe)些模(mo)(mo)(mo)塊(kuai)后，應(ying)用(yong)(yong)的(de)(de)(de)設計者就(jiu)可以(yi)(yi)為應(ying)用(yong)(yong)增(zeng)加充電(dian)器模(mo)(mo)(mo)塊(kuai)，建(jian)立相(xiang)應(ying)的(de)(de)(de)充電(dian)曲(qu)線。模(mo)(mo)(mo)塊(kuai)還生成(cheng)了所(suo)有其(qi)它(ta)的(de)(de)(de)硬件塊(kuai)，包括比較(jiao)器與(yu)PWM，以(yi)(yi)及軟(ruan)件狀態機。采用(yong)(yong)可重新編(bian)程的(de)(de)(de)架構時，如Cypress半導體公(gong)司的(de)(de)(de)PSoC（可編(bian)程系統單芯(xin)片），就(jiu)可以(yi)(yi)用(yong)(yong)軟(ruan)件應(ying)用(yong)(yong)，對硬件模(mo)(mo)(mo)塊(kuai)做編(bian)程和(he)實現。采用(yong)(yong)這(zhe)種(zhong)方式，開發人員可用(yong)(yong)NiMH電(dian)池(chi)的(de)(de)(de)充電(dian)曲(qu)線為圖3中的(de)(de)(de)硬件編(bian)程。為產(chan)品增(zeng)加一個USB（通(tong)用(yong)(yong)串行總(zong)線）模(mo)(mo)(mo)塊(kuai)，開發人員就(jiu)可以(yi)(yi)將電(dian)池(chi)參(can)數(shu)發送(song)給計算機。用(yong)(yong)C#語言(yan)的(de)(de)(de)一個軟(ruan)件工具(ju)就(jiu)可以(yi)(yi)繪出這(zhe)些數(shu)據，當然也可以(yi)(yi)采用(yong)(yong)其(qi)它(ta)類(lei)型的(de)(de)(de)通(tong)信方式和(he)相(xiang)近的(de)(de)(de)工具(ju)。電(dian)池(chi)仿真器用(yong)(yong)于模(mo)(mo)(mo)仿鋰離電(dian)池(chi)和(he)NiMH電(dian)池(chi)，獲(huo)得實時的(de)(de)(de)圖像（圖5）。

                                                            圖5，電池仿真器模擬鋰離子電池(a)和NiMH電池(b)，獲得實時的圖形。

　　由于使用(yong)了電(dian)(dian)池仿(fang)真(zhen)器(qi)，電(dian)(dian)壓(ya)的(de)(de)變(bian)化(hua)便產生了電(dian)(dian)流的(de)(de)開(kai)(kai)關(guan)噪(zao)聲。因為使用(yong)電(dian)(dian)池仿(fang)真(zhen)器(qi)的(de)(de)電(dian)(dian)壓(ya)變(bian)化(hua)較快，PWM輸(shu)出對一個(ge)電(dian)(dian)壓(ya)變(bian)化(hua)的(de)(de)響應與(yu)安定(ding)時(shi)間可(ke)看作開(kai)(kai)關(guan)噪(zao)聲。一塊(kuai)電(dian)(dian)池中的(de)(de)電(dian)(dian)壓(ya)變(bian)化(hua)是漸進(jin)的(de)(de)，因此開(kai)(kai)關(guan)噪(zao)聲在一塊(kuai)實(shi)際(ji)電(dian)(dian)池中并不明顯。

　　通(tong)過(guo)對SoC（系統單芯片）固件(jian)的(de)簡單修改(gai)，就可以用相同硬件(jian)，開發(fa)出用于多種(zhong)化(hua)學類型(xing)電(dian)(dian)池的(de)充電(dian)(dian)器。將充電(dian)(dian)曲線模(mo)塊做到元件(jian)中，便于主應用附加電(dian)(dian)池充電(dian)(dian)的(de)功能。