鋰離子可充電電池是20世紀開發成功的新型高能電池，相對于傳統的鎳鎘電池和鎳氫電池而言，具有容量大、工作電壓高、工作溫度范圍寬、循環壽命長、自放電率低、無記憶效應、無污染等優點，自問世以來已廣泛應用于軍事和民用小型電器中，如移動電話、便攜式計算機、攝像機、照相機等，部分代替了傳統電池。單節鋰離子電池的電壓約為3．6V，容量也不可能無限大，因此，常將單節鋰離子電池進行串(chuan)、并聯處理，以滿(man)足不同場合的(de)要(yao)求。為了確保(bao)(bao)鋰離子(zi)電(dian)(dian)(dian)(dian)(dian)池安全可靠的(de)使用(yong)，本文介紹(shao)了一種嚴(yan)格(ge)、周密的(de)充(chong)、放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)(hu)系統的(de)設(she)計方案。該方案采用(yong)充(chong)電(dian)(dian)(dian)(dian)(dian)、放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)分離的(de)控(kong)制(zhi)方式(shi)，具有兩級單節過充(chong)電(dian)(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)(hu)、單節過放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)(hu)、兩級放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)過電(dian)(dian)(dian)(dian)(dian)流保(bao)(bao)護(hu)(hu)、放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)短路(lu)保(bao)(bao)護(hu)(hu)、放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)溫度保(bao)(bao)護(hu)(hu)、充(chong)電(dian)(dian)(dian)(dian)(dian)溫度保(bao)(bao)護(hu)(hu)、充(chong)電(dian)(dian)(dian)(dian)(dian)防反接保(bao)(bao)護(hu)(hu)、充(chong)電(dian)(dian)(dian)(dian)(dian)時禁止放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)等功能，可適用(yong)于各種三／四(si)節鋰離子(zi)可充(chong)電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)池串(chuan)聯使用(yong)的(de)場合。

　　1 系統概述

　　該(gai)保(bao)(bao)護(hu)(hu)系(xi)(xi)統采(cai)用(yong)(yong)精(jing)(jing)工(gong)電(dian)(dian)(dian)(dian)子(zi)三(san)／四節串聯鋰離子(zi)可(ke)(ke)充電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)池專用(yong)(yong)充、放(fang)電(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)(hu)ICS-8254構建(jian)一級保(bao)(bao)護(hu)(hu)。S-8254系(xi)(xi)列內置(zhi)高(gao)精(jing)(jing)度電(dian)(dian)(dian)(dian)壓(ya)檢(jian)(jian)(jian)測(ce)電(dian)(dian)(dian)(dian)路(lu)(lu)(lu)和(he)(he)延(yan)遲電(dian)(dian)(dian)(dian)路(lu)(lu)(lu)，針對各節電(dian)(dian)(dian)(dian)池進行高(gao)精(jing)(jing)度電(dian)(dian)(dian)(dian)壓(ya)檢(jian)(jian)(jian)測(ce)，實現(xian)單節過(guo)(guo)充電(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)(hu)和(he)(he)單節過(guo)(guo)放(fang)電(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)(hu)，并具備三(san)段過(guo)(guo)電(dian)(dian)(dian)(dian)流(liu)(liu)檢(jian)(jian)(jian)測(ce)功能，通過(guo)(guo)外接電(dian)(dian)(dian)(dian)容可(ke)(ke)設置(zhi)過(guo)(guo)充電(dian)(dian)(dian)(dian)檢(jian)(jian)(jian)測(ce)延(yan)遲時(shi)間、過(guo)(guo)放(fang)電(dian)(dian)(dian)(dian)檢(jian)(jian)(jian)測(ce)延(yan)遲時(shi)間和(he)(he)過(guo)(guo)電(dian)(dian)(dian)(dian)流(liu)(liu)檢(jian)(jian)(jian)測(ce)延(yan)遲時(shi)間1(過(guo)(guo)電(dian)(dian)(dian)(dian)流(liu)(liu)檢(jian)(jian)(jian)測(ce)延(yan)遲時(shi)間2和(he)(he)過(guo)(guo)電(dian)(dian)(dian)(dian)流(liu)(liu)檢(jian)(jian)(jian)測(ce)延(yan)遲時(shi)間3在芯片內部被固定)。該(gai)系(xi)(xi)統采(cai)用(yong)(yong)精(jing)(jing)工(gong)電(dian)(dian)(dian)(dian)子(zi)S-8244系(xi)(xi)列內置(zhi)高(gao)精(jing)(jing)度電(dian)(dian)(dian)(dian)壓(ya)檢(jian)(jian)(jian)測(ce)電(dian)(dian)(dian)(dian)路(lu)(lu)(lu)和(he)(he)延(yan)遲電(dian)(dian)(dian)(dian)路(lu)(lu)(lu)的鋰離子(zi)可(ke)(ke)充電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)池二級保(bao)(bao)護(hu)(hu)專用(yong)(yong)IC實現(xian)電(dian)(dian)(dian)(dian)池的單節二級充電(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)(hu)，其保(bao)(bao)護(hu)(hu)延(yan)遲時(shi)間可(ke)(ke)通過(guo)(guo)外接電(dian)(dian)(dian)(dian)容的容值來設置(zhi)。

　　S-8254通(tong)過SEL端子(zi)(zi)可以實現(xian)電(dian)池三(san)節(jie)串聯(lian)用或四(si)節(jie)串聯(lian)用的(de)切(qie)換(huan)；S-8244則(ze)通(tong)過電(dian)阻R22短路第四(si)節(jie)電(dian)池電(dian)壓檢(jian)測端子(zi)(zi)VCC3和VSS即可用作三(san)節(jie)電(dian)池串聯(lian)使用時的(de)二級(ji)保護。

　　2 各保護功能的實現

S-8254系列充、放電保護電壓和過電流檢測電壓以50mV為進階單位，S-8244系列過充電檢測電壓以5mV為進階單位，系統根據不同場合的使用需求，可以選擇相應適合的型號。現以圖1保護系統為例，采用S-8254AAVFT和S-8244AAPFN作為保護IC，具體說明各保護功能的實現過程。
 

　　圖1為四節電(dian)池串聯使(shi)用時的保護系(xi)統原(yuan)理圖。

　　2．1 過放電(dian)保護

　　通常(chang)(chang)狀(zhuang)態(tai)(tai)下，S-8254放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)控制用端子(zi)(zi)DOP為VSS(電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)4的負電(dian)(dian)(dian)(dian)(dian)(dian)壓)電(dian)(dian)(dian)(dian)(dian)(dian)位，放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)MOS管(guan)(guan)QDISl，QDIS2處于導(dao)通狀(zhuang)態(tai)(tai)，系統可(ke)正(zheng)常(chang)(chang)進行放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)工作。當檢測到某節電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)(dian)(dian)壓低(di)于2．7V(VDLn)，且這種(zhong)狀(zhuang)態(tai)(tai)保持(chi)在TDL(TDL時(shi)間(jian)由過(guo)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)檢測延遲端子(zi)(zi)CDT外接電(dian)(dian)(dian)(dian)(dian)(dian)容CS決定(ding))以上時(shi)，DOP端子(zi)(zi)的電(dian)(dian)(dian)(dian)(dian)(dian)壓變為VDD(電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)1的正(zheng)電(dian)(dian)(dian)(dian)(dian)(dian)壓)電(dian)(dian)(dian)(dian)(dian)(dian)位，放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)MOS管(guan)(guan)關閉，停(ting)止放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)，這種(zhong)狀(zhuang)態(tai)(tai)稱為過(guo)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)狀(zhuang)態(tai)(tai)。進入過(guo)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)狀(zhuang)態(tai)(tai)后(hou)，VMP端子(zi)(zi)電(dian)(dian)(dian)(dian)(dian)(dian)壓經電(dian)(dian)(dian)(dian)(dian)(dian)阻R3由負載下拉(la)至(zhi)(zhi)VDD／2以下，S-8254轉為休眠狀(zhuang)態(tai)(tai)；斷開負載后(hou)，VMP端子(zi)(zi)電(dian)(dian)(dian)(dian)(dian)(dian)壓經電(dian)(dian)(dian)(dian)(dian)(dian)阻R9、充電(dian)(dian)(dian)(dian)(dian)(dian)MOS管(guan)(guan)QCHRl和(he)QCHR2由VDD上拉(la)至(zhi)(zhi)VDD／2以上且低(di)于VDD，S-8254退出(chu)休眠狀(zhuang)態(tai)(tai)。當所有電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)(dian)(dian)壓都(dou)在3．0V(VDUn)以上時(shi)，過(guo)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)狀(zhuang)態(tai)(tai)被(bei)解除，系統恢復正(zheng)常(chang)(chang)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)工作。

　　2．2 過電流、短(duan)路保護

　　該系統(tong)(tong)采用2個并聯的(de)(de)(de)20mΩ功率電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)RS1，RS2用于(yu)過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)檢測(ce)(ce)。當放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)大(da)(da)于(yu)20A時(shi)(shi)，過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)1，2檢測(ce)(ce)端子(zi)(zi)VINI和VSS之間(jian)(jian)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)差大(da)(da)于(yu)過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)檢測(ce)(ce)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)位(wei)(wei)1VI0V1(O．2V)，且這(zhe)種狀(zhuang)(zhuang)(zhuang)態(tai)保(bao)(bao)持在TIOVl(TIOVl時(shi)(shi)間(jian)(jian)由(you)過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)1檢測(ce)(ce)延(yan)遲端子(zi)(zi)CDT外(wai)接電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)容C3決定)以上(shang)時(shi)(shi)，DOP端子(zi)(zi)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)變為(wei)VDD電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)位(wei)(wei)，放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOS管關(guan)閉(bi)，停止(zhi)放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，進(jin)入過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)1保(bao)(bao)護(hu)狀(zhuang)(zhuang)(zhuang)態(tai)。在過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)狀(zhuang)(zhuang)(zhuang)態(tai)下(xia)，VMP端子(zi)(zi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)經電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)R3由(you)負載(zai)下(xia)拉至(zhi)VSS；斷開負載(zai)后，VMP端子(zi)(zi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)經IC內(nei)部RVMD電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)被上(shang)拉至(zhi)過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)檢測(ce)(ce)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)位(wei)(wei)3VIOV3(電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池1的(de)(de)(de)正電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)VC1～1．2V)以上(shang)，過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)狀(zhuang)(zhuang)(zhuang)態(tai)解除，系統(tong)(tong)恢復正常放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)。當放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)大(da)(da)于(yu)50A時(shi)(shi)，VINI和VSS之間(jian)(jian)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)差大(da)(da)于(yu)過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)檢測(ce)(ce)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)位(wei)(wei)2VIOV2(0．5V)，且這(zhe)種狀(zhuang)(zhuang)(zhuang)態(tai)保(bao)(bao)持在TIOV2(1ms)以上(shang)時(shi)(shi)，進(jin)入過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)2保(bao)(bao)護(hu)狀(zhuang)(zhuang)(zhuang)態(tai)。當負載(zai)出現短路(lu)時(shi)(shi)，過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)3檢測(ce)(ce)端子(zi)(zi)VMP的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)被瞬間(jian)(jian)拉至(zhi)VIOV3以下(xia)(檢測(ce)(ce)延(yan)遲時(shi)(shi)間(jian)(jian)TI0V3為(wei)300μs)，系統(tong)(tong)進(jin)入短路(lu)保(bao)(bao)護(hu)(過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)3保(bao)(bao)護(hu))狀(zhuang)(zhuang)(zhuang)態(tai)。

　　2．3 過充電保護

為了確保電池的安全性，該系統對于過充電狀態采取了兩級保護措施。首先，當檢測到某節電池電壓高于4．05V(VCU2n)，且這種狀態保持在TCU2(TCU2時間由S-8244過充電檢測延遲端子ICT外接電容C16決定)以上時，S-8244充電控制用端子CO輸出動態“H”，二級充電MOS管QCHR2關閉，停止充電，這種狀態稱為過充電狀態；進入過充電狀態后，當所有電池電壓都在3．80V(VCL2n)以下時，過充電狀態解除。若因某種原因導致S-8244保護失效，則S-8254過充電保護生效，當檢測到某節電池電壓高于4．25V(VCUln)，且這種狀態保持在TCUl(TCUl時間由S-8254過充電檢測延遲端子CCT外接電容C2決定)以上時，S-8254充電控制用端子COP變為高阻抗，一級充電MOS管QCHRl的G極被外接電阻R2拉高，QCHRl關閉，進入過充電狀態；當所有電池電壓都在4．15V(VCLln)以下時，過充電狀態解除。
2．4 充電溫(wen)度(du)保(bao)護(hu)

　　為(wei)了確保(bao)充(chong)(chong)電(dian)(dian)(dian)時(shi)的(de)(de)安全(quan)性和延長電(dian)(dian)(dian)池的(de)(de)使用壽命，電(dian)(dian)(dian)池的(de)(de)充(chong)(chong)電(dian)(dian)(dian)溫(wen)(wen)度(du)應控制在O～45℃之間為(wei)宜。該系統采用一(yi)(yi)(yi)個負溫(wen)(wen)度(du)系數的(de)(de)NTC溫(wen)(wen)度(du)傳感器RES和一(yi)(yi)(yi)個2路(lu)(lu)比(bi)較(jiao)(jiao)器LM393來(lai)實(shi)現充(chong)(chong)電(dian)(dian)(dian)溫(wen)(wen)度(du)保(bao)護，其原理圖(tu)如圖(tu)2所示(shi)：當(dang)(dang)充(chong)(chong)電(dian)(dian)(dian)溫(wen)(wen)度(du)位(wei)于(yu)O～45℃之間時(shi)，LM393的(de)(de)兩路(lu)(lu)比(bi)較(jiao)(jiao)器輸出均(jun)為(wei)高阻態，PNP型(xing)三極(ji)管Q1關(guan)斷(duan)，對充(chong)(chong)電(dian)(dian)(dian)電(dian)(dian)(dian)路(lu)(lu)不產(chan)生影響；隨(sui)著溫(wen)(wen)度(du)的(de)(de)升高，RES阻值逐漸(jian)變小(xiao)，當(dang)(dang)溫(wen)(wen)度(du)大于(yu)45℃時(shi)，LM393下面(mian)一(yi)(yi)(yi)路(lu)(lu)比(bi)較(jiao)(jiao)器反轉，輸出低電(dian)(dian)(dian)平，通(tong)(tong)過(guo)二(er)極(ji)管D6將Q1的(de)(de)B極(ji)拉(la)低，Q1導通(tong)(tong)，充(chong)(chong)電(dian)(dian)(dian)MOS管QCHRl的(de)(de)G極(ji)C_QCHR被強(qiang)制拉(la)高，QCHRl關(guan)閉，停止充(chong)(chong)電(dian)(dian)(dian)；同樣(yang)，隨(sui)著溫(wen)(wen)度(du)的(de)(de)降(jiang)低，RES阻值逐漸(jian)變大，當(dang)(dang)溫(wen)(wen)度(du)小(xiao)于(yu)O℃時(shi)，LM393上(shang)面(mian)一(yi)(yi)(yi)路(lu)(lu)比(bi)較(jiao)(jiao)器輸出低電(dian)(dian)(dian)平，通(tong)(tong)過(guo)二(er)極(ji)管D5將Q1導通(tong)(tong)，從而關(guan)閉QCHRl，停止充(chong)(chong)電(dian)(dian)(dian)。

　　2．5 其(qi)他保護功能

　　該系統通過一些簡(jian)單有效的(de)電(dian)路設計(ji)，巧妙(miao)地實現了(le)所需的(de)某(mou)些保護功能。

　　2．5．1 放電溫度(du)保護

　　為了(le)確保(bao)(bao)電(dian)(dian)池(chi)的(de)使用安全性，需對電(dian)(dian)池(chi)的(de)放(fang)(fang)電(dian)(dian)溫(wen)度進行限制。該系統(tong)在(zai)放(fang)(fang)電(dian)(dian)MOS管(guan)QDISl，QDIS2的(de)G極(ji)C_QDIS和VDD之間連接了(le)一個常開型可(ke)恢復溫(wen)度保(bao)(bao)險絲F1。通常狀態下F1保(bao)(bao)持開路(lu)。不影響正常放(fang)(fang)電(dian)(dian)；當電(dian)(dian)池(chi)溫(wen)度高于(yu)75℃時，F1閉合，C_QDIS與VDD導通．放(fang)(fang)電(dian)(dian)MOS管(guan)關閉，停止放(fang)(fang)電(dian)(dian)，從而(er)實(shi)現放(fang)(fang)電(dian)(dian)溫(wen)度保(bao)(bao)護功(gong)能。

　　2．5．2 充電防反接保(bao)護

　　若誤將充電器的正、負極(ji)反接(jie)入(ru)系(xi)統中，則會由(you)充(chong)電(dian)器(qi)和電(dian)池共同(tong)形成一個(ge)大電(dian)流回(hui)路，導致元器(qi)件損壞，甚至帶(dai)來更大的安(an)全危害。該系(xi)統在充(chong)電(dian)回(hui)路中串接(jie)進一個(ge)防(fang)反接(jie)二極(ji)管(guan)D1，這樣即使充(chong)電(dian)器(qi)反接(jie)，因此時CHRl的電(dian)位將高于(yu)CHR+，由(you)于(yu)二極(ji)管(guan)D1的存在，系(xi)統將構不成回(hui)路，從而(er)對其起(qi)到了保(bao)護作用。

　　2．5．3 充電時禁止放電

　　系統在連接充電器進行充電的過程中若允許其進行放電工作，可能會帶來不必要的安全隱患，因此該系統在充電器的正極輸入端CHR+和C_QDIS之間接入了一個二極管D4。在未連接充電器時，CHR+懸(xuan)空(kong)，對放(fang)電(dian)工作不產生影(ying)響；當連接充電(dian)器進(jin)行充電(dian)時，C_QDIS通過(guo)D4被CHR+強(qiang)制拉(la)高，QDISl，QDIS2關閉，禁止放(fang)電(dian)。

　　鋰離(li)子可(ke)充電(dian)電(dian)池(chi)以(yi)其(qi)特(te)有的(de)性能優(you)勢已經在多個(ge)領域中得(de)到了普(pu)遍應用(yong)(yong)，可(ke)以(yi)預計其(qi)必將成為21世(shi)紀的(de)主(zhu)要(yao)(yao)動力電(dian)源之(zhi)一(yi)。隨(sui)著鋰離(li)子可(ke)充電(dian)電(dian)池(chi)工業的(de)發(fa)展，保護系統作(zuo)為其(qi)不可(ke)分割的(de)一(yi)部分必將起到越來越重要(yao)(yao)的(de)作(zuo)用(yong)(yong)。