聚合物鋰離子電池使用注意事項
一、電芯操作注(zhu)(zhu)，他說：想發財就去萬通(tong)商(shang)聯找優質表(biao)帶供(gong)貨商(shang)！注(zhu)(zhu)意事項
由于(yu)電(dian)芯屬于(yu)軟包裝，為保(bao)證電(dian)芯的性能不受(shou)損害，必須小心(xin)對(dui)電(dian)芯進(jin)行操作。
1.鋁箔包裝材料
鋁箔(bo)包裝材料易被尖(jian)銳部件(jian)刺損(sun)，諸如鎳片、尖(jian)針。
禁止用尖銳部件碰撞電池(chi)
應清潔工作環境，避免有尖銳(rui)部件存(cun)在
禁止(zhi)用(yong)釘(ding)子及其它(ta)利(li)器刺(ci)穿電池
禁(jin)止將電池與金屬物，如項鏈、發(fa)夾等一起運輸或貯存
2.頂封邊(bian)
頂封邊非常(chang)容易受(shou)到損害(hai)
禁止彎折頂封(feng)邊
3.折邊
折邊(bian)在電池生產過(guo)程中已完(wan)成，并通過(guo)了密封測試(shi)。
禁止打(da)開或破壞(huai)折邊 4.極耳
極(ji)耳的機械強度并非異常堅固，特(te)別是(shi)鋁片。
禁(jin)止彎折極(ji)耳
5.機械撞(zhuang)擊
禁止墜落、沖擊(ji)、彎(wan)折電芯
禁止用錘子敲擊或(huo)踩踏電池
禁止敲(qiao)擊或拋擲(zhi)電池。
6.短(duan)路
任何時候(hou)禁(jin)止短路(lu)電芯，它(ta)會導(dao)致(zhi)電芯嚴重損壞
禁止用金(jin)屬物(wu)如電(dian)線短(duan)路連(lian)接電(dian)池正負極
二、聚合物(wu)鋰離子(zi)電池(chi)測試標準環(huan)境
環境(jing)溫(wen)度： 20±5℃
相對濕度： 45~85%
在測試前電池都(dou)要先放完(wan)電
三(san)、聚合物鋰(li)離子電(dian)范(fan)充放電(dian)注意事項
1.充電(dian)
充(chong)(chong)電(dian)電(dian)流及(ji)(ji)(ji)充(chong)(chong)電(dian)電(dian)壓(ya)不得超過以下標準，如超過規定值可(ke)能(neng)會(hui)對(dui)電(dian)芯的充(chong)(chong)放電(dian)性能(neng)、機械性能(neng)及(ji)(ji)(ji)安全性造成(cheng)造成(cheng)損(sun)壞(huai)，進可(ke)能(neng)導(dao)致(zhi)發熱及(ji)(ji)(ji)泄漏。
電池充電器必須能(neng)恒流恒壓充(chong)電；
充電時的單體電池(chi)充電電流必須在1C5A以下；
充電(dian)時溫度范圍在0~+45℃；
充電時電壓不能超過4.23V。
2.放電
放電電流不得超過以下(xia)標(biao)準，放電必須在本標(biao)準范圍內進行。
單體電池放(fang)電電流(liu)必須小于2C5A；
放電(dian)時溫度范圍在-20~+60℃；
單體電池放(fang)電終止電壓不小于2.75V。
3.過(guo)放電
需要注意的是，在電(dian)(dian)芯長期未使用期間，它(ta)可(ke)能(neng)會(hui)用其自放(fang)電(dian)(dian)特性而處于某種過放(fang)電(dian)(dian)狀態(tai)。為防止過放(fang)電(dian)(dian)的發生不能(neng)過放(fang)電(dian)(dian)使單(dan)體電(dian)(dian)池低于2.5V。
4.具體應用(yong)時要(yao)求(qiu)加合(he)格保護電路板。
四、聚合(he)物鋰離子電(dian)池(chi)貯(zhu)存
電(dian)池長期貯存(cun)的環境為：溫度-20~+35℃
相(xiang)對(dui)濕度 45~75%
電池(chi)貯存期近一年時要用標準充電方式給(gei)電池(chi)充電10%~50%。
五、聚合物鋰離(li)子電池運輸
電池應在10%~50%的充(chong)電狀(zhuang)態下運輸。
六、聚(ju)合物鋰離子電(dian)池(chi)其它使用說明
1.為了防止電池可能(neng)發(fa)生泄漏(lou)、發(fa)熱、爆炸，請注意以(yi)下預防措施：
禁止在任何情況下(xia)拆卸電芯。
禁止將電池浸(jin)入水中(zhong)或海水中(zhong)，不能(neng)受潮。
禁止在(zai)熱(re)源旁，如(ru)火、加熱(re)器等(deng)，使用或放置(zhi)電池。
禁(jin)止將電池加(jia)熱或(huo)丟入火中。
禁止直接(jie)焊(han)接(jie)電池。
禁止(zhi)在火邊或很熱(re)的環境中充電。
&n，他說：想發財就(jiu)去萬通商聯找(zhao)優質表帶供貨商！nbsp; 禁止(zhi)將電(dian)池(chi)放入微波(bo)爐或(huo)高壓容(rong)器(qi)內。
禁止在高溫下（如強陽光或(huo)很熱的汽車中）使用或(huo)放置電池，否則會引(yin)起(qi)(qi)過(guo)熱、起(qi)(qi)火或(huo)者功能(neng)衰退、壽命(ming)減小。
2.聚合物鋰離子電(dian)池(chi)理論上不(bu)存在流動(dong)的電(dian)解(jie)(jie)液，但萬一(yi)有電(dian)解(jie)(jie)液泄漏(lou)而(er)接觸(chu)到皮膚、眼(yan)睛(jing)或(huo)身體其它(ta)部(bu)位，應立(li)即用清水沖冼(xian)電(dian)解(jie)(jie)液并就醫(yi)。
3.禁止使用已損壞(huai)的電芯（電芯塑料封邊損壞(huai)，外殼破損，聞到(dao)電解液(ye)氣體，電解液(ye)泄漏(lou)等）。
如(ru)有電(dian)解(jie)液(ye)泄漏(lou)或散(san)發電(dian)解(jie)液(ye)氣味的電(dian)池應遠離火(huo)源以避(bi)免(mian)著火(huo)或爆(bao)炸。
鋰電池保護電路綜述
鋰離子電池保(bao)護(hu)(hu)電(dian)(dian)(dian)(dian)路包(bao)括過(guo)度充電(dian)(dian)(dian)(dian)保(bao)護(hu)(hu)、過(guo)電(dian)(dian)(dian)(dian)流／短路保(bao)護(hu)(hu)和過(guo)放(fang)電(dian)(dian)(dian)(dian)保(bao)護(hu)(hu)，要求過(guo)充電(dian)(dian)(dian)(dian)保(bao)護(hu)(hu)高(gao)精(jing)密度、保(bao)護(hu)(hu)IC功耗低(di)、高(gao)耐(nai)壓以及零伏(fu)可充電(dian)(dian)(dian)(dian)等特性(xing)(xing)。本文詳細(xi)介紹了這三種保(bao)護(hu)(hu)電(dian)(dian)(dian)(dian)路的(de)原理、新功能和特性(xing)(xing)要求。
近年來(lai)，PDA、數(shu)字相(xiang)機、手機、可攜式音訊設備和藍芽設備等越(yue)來(lai)越(yue)多的產品(pin)采用鋰(li)電(dian)(dian)(dian)(dian)(dian)(dian)池作為主要電(dian)(dian)(dian)(dian)(dian)(dian)源。鋰(li)電(dian)(dian)(dian)(dian)(dian)(dian)池具有體積小、能(neng)量密度高、無記憶效應、循環壽命高、高電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)電(dian)(dian)(dian)(dian)(dian)(dian)池和自放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)率低等優點，與(yu)鎳(nie)鎘、鎳(nie)氫電(dian)(dian)(dian)(dian)(dian)(dian)池不(bu)太一樣，鋰(li)電(dian)(dian)(dian)(dian)(dian)(dian)池必須考慮充電(dian)(dian)(dian)(dian)(dian)(dian)、放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)時的安全性，以防止特性劣(lie)化。針(zhen)對(dui)鋰(li)電(dian)(dian)(dian)(dian)(dian)(dian)池的過充、過度放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)、過電(dian)(dian)(dian)(dian)(dian)(dian)流及短路保護(hu)(hu)很重(zhong)要，所以通常都會在電(dian)(dian)(dian)(dian)(dian)(dian)池包內(nei)設計保護(hu)(hu)線(xian)路用以保護(hu)(hu)鋰(li)電(dian)(dian)(dian)(dian)(dian)(dian)池。
由于(yu)(yu)鋰離子電池能量密度高(gao)，因(yin)此難(nan)以確保電池的(de)安(an)全(quan)性(xing)。在過度充(chong)電狀態(tai)下(xia)，電池溫度上(shang)升(sheng)后能量將過剩(sheng)，于(yu)(yu)是(shi)電解液分解而產(chan)生氣體(ti)，因(yin)內壓上(shang)升(sheng)而產(chan)生自燃或破裂的(de)危險(xian)；反之，在過度放(fang)電狀態(tai)下(xia)，電解液因(yin)分解導致電池特性(xing)及(ji)耐久性(xing)劣(lie)化，因(yin)而降低可充(chong)電次(ci)數。
鋰(li)離子電(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)保(bao)(bao)護(hu)電(dian)(dian)(dian)(dian)路(lu)(lu)就(jiu)是要確(que)保(bao)(bao)這(zhe)樣(yang)的(de)(de)(de)過度充電(dian)(dian)(dian)(dian)及放(fang)電(dian)(dian)(dian)(dian)狀態時的(de)(de)(de)安全性，并防止特(te)性劣化。鋰(li)離子電(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)保(bao)(bao)護(hu)電(dian)(dian)(dian)(dian)路(lu)(lu)是由保(bao)(bao)護(hu)IC及兩顆功率(lv)MOSFET所構(gou)成，其中保(bao)(bao)護(hu)IC監視電(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)壓，當有(you)過度充電(dian)(dian)(dian)(dian)及放(fang)電(dian)(dian)(dian)(dian)狀態時切換到以外掛的(de)(de)(de)功率(lv)MOSFET來保(bao)(bao)護(hu)電(dian)(dian)(dian)(dian)池(chi)，保(bao)(bao)護(hu)IC的(de)(de)(de)功能有(you)過度充電(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)、過度放(fang)電(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)和過電(dian)(dian)(dian)(dian)流／短路(lu)(lu)保(bao)(bao)護(hu)。
一(yi)、過度充電(dian)保(bao)護
過(guo)度(du)充(chong)電(dian)保護(hu)(hu)IC的原理為：當外部充(chong)電(dian)器對(dui)鋰電(dian)池充(chong)電(dian)時，為防止(zhi)因(yin)溫度(du)上升所導致的內壓上升，需(xu)終止(zhi)充(chong)電(dian)狀態。此時，保護(hu)(hu)IC需(xu)檢測電(dian)池電(dian)壓，當到達4.25V時（假設電(dian)池過(guo)充(chong)點為4.25V）即激活(huo)過(guo)度(du)充(chong)電(dian)保護(hu)(hu)，將功率MOSFET由開轉(zhuan)為切斷，進而截止(zhi)充(chong)電(dian)。
另(ling)外，還必(bi)須注意因噪音(yin)所產生(sheng)的過度充電檢出(chu)誤動作(zuo)，以免(mian)判定為過充保護(hu)。因此，需要設定延遲時(shi)間，并(bing)且(qie)延遲時(shi)間不能短于噪音(yin)的持續時(shi)間。
二(er)、過(guo)度放電保(bao)護
在(zai)過度放電(dian)(dian)的(de)情況下，電(dian)(dian)解液因分解而(er)導致電(dian)(dian)池特性劣(lie)化，并造成充電(dian)(dian)次數的(de)降低。采用鋰(li)電(dian)(dian)池保護IC可以避免過度放電(dian)(dian)現象產生(sheng)，實現電(dian)(dian)池保護功能。
過度(du)放(fang)(fang)電(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)IC原(yuan)理：為了防止鋰(li)電(dian)(dian)(dian)(dian)池(chi)(chi)的過度(du)放(fang)(fang)電(dian)(dian)(dian)(dian)狀(zhuang)態，假設鋰(li)電(dian)(dian)(dian)(dian)池(chi)(chi)接上負載，當鋰(li)電(dian)(dian)(dian)(dian)池(chi)(chi)電(dian)(dian)(dian)(dian)壓低(di)于其過度(du)放(fang)(fang)電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)壓檢測(ce)點（假定為2.3V）時將(jiang)(jiang)激活過度(du)放(fang)(fang)電(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)，使功率MOSFET由(you)開(kai)轉變為切斷(duan)而(er)截(jie)止放(fang)(fang)電(dian)(dian)(dian)(dian)，以避免電(dian)(dian)(dian)(dian)池(chi)(chi)過度(du)放(fang)(fang)電(dian)(dian)(dian)(dian)現(xian)象產生，并將(jiang)(jiang)電(dian)(dian)(dian)(dian)池(chi)(chi)保(bao)(bao)持在(zai)低(di)靜態電(dian)(dian)(dian)(dian)流(liu)的待機模式，此(ci)時的電(dian)(dian)(dian)(dian)流(liu)僅(jin)0.1μA。
當鋰電(dian)(dian)(dian)(dian)池接上充(chong)電(dian)(dian)(dian)(dian)器，且此時鋰電(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)壓高(gao)于過(guo)度放電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)壓時，過(guo)度放電(dian)(dian)(dian)(dian)保護功能方可解(jie)除(chu)。另外(wai)，考慮到脈(mo)沖放電(dian)(dian)(dian)(dian)的情況(kuang)，過(guo)放電(dian)(dian)(dian)(dian)檢測電(dian)(dian)(dian)(dian)路設有延遲時間(jian)以避免產(chan)生誤動作。
三、過電(dian)流及短路電(dian)流
因(yin)為不明原因(yin)（放(fang)電時或正負極遭金屬物誤(wu)觸）造成過電流(liu)或短路，為確保安全，必須使其立(li)即停止放(fang)電。
過(guo)電(dian)(dian)流(liu)保(bao)護(hu)IC原(yuan)理為(wei)(wei)，當(dang)放電(dian)(dian)電(dian)(dian)流(liu)過(guo)大或短路情(qing)況產(chan)生時(shi)，保(bao)護(hu)IC將激活過(guo)（短路）電(dian)(dian)流(liu)保(bao)護(hu)，此時(shi)過(guo)電(dian)(dian)流(liu)的(de)檢測是將功(gong)率MOSFET的(de)Rds(on) 當(dang)成感應(ying)阻抗用以監測其電(dian)(dian)壓的(de)下降情(qing)形，如果比所定的(de)過(guo)電(dian)(dian)流(liu)檢測電(dian)(dian)壓還高(gao)則停止放電(dian)(dian)，運算公(gong)式為(wei)(wei):
V- = I × Rds(on) × 2（V- 為過電(dian)流(liu)檢測電(dian)壓，I 為放電(dian)電(dian)流(liu)）
假設 V- = 0.2V，Rds(on) = 25mΩ，則保護(hu)電流的大小(xiao)為 I = 4A
同樣地(di)，過電流(liu)檢(jian)測也必須(xu)設(she)有(you)(you)延遲(chi)時(shi)間以防有(you)(you)突(tu)發(fa)電流(liu)流(liu)入時(shi)產生誤動作(zuo)。
通(tong)常在過電流產生(sheng)后，若能去(qu)除過電流因素（例如馬(ma)上(shang)與負載脫離），將會恢復(fu)其正常狀態，可以再(zai)進行正常的充(chong)放(fang)電動作。
四(si)、鋰電池保護IC的(de)新功能
除了上述的鋰電(dian)池保護IC功(gong)能之外，下面這些新的功(gong)能同樣值(zhi)得關注：
1.充電時的過電流保護
當連接(jie)充電器進(jin)行充電時(shi)突然產生過(guo)電流（如充電器損壞），電路(lu)立即進(jin)行過(guo)電流檢測，此時(shi)Cout將由(you)(you)高轉為低，功率MOSFET由(you)(you)開轉為切斷，實(shi)現保護功能。
V- = I × Rds(on) × 2
（I 是充電電流；Vdet4，過(guo)電流檢(jian)測電壓，Vdet4 為 -0.1V）
2.過度充電時的鎖定(ding)模(mo)式
通常保(bao)(bao)護(hu)(hu)IC在過(guo)度充(chong)(chong)(chong)電(dian)(dian)(dian)保(bao)(bao)護(hu)(hu)時(shi)將(jiang)(jiang)經過(guo)一段延遲(chi)時(shi)間(jian)，然后(hou)(hou)就會(hui)(hui)將(jiang)(jiang)功率MOSFET切斷以達到(dao)保(bao)(bao)護(hu)(hu)的(de)目(mu)的(de)，當鋰電(dian)(dian)(dian)池電(dian)(dian)(dian)壓(ya)(ya)一直下降(jiang)到(dao)解除點（過(guo)度充(chong)(chong)(chong)電(dian)(dian)(dian)滯后(hou)(hou)電(dian)(dian)(dian)壓(ya)(ya)）時(shi)就會(hui)(hui)恢復(fu)(fu)，此(ci)時(shi)又會(hui)(hui)繼續充(chong)(chong)(chong)電(dian)(dian)(dian)→保(bao)(bao)護(hu)(hu)→放(fang)電(dian)(dian)(dian)→充(chong)(chong)(chong)電(dian)(dian)(dian)→放(fang)電(dian)(dian)(dian)。這種狀態(tai)的(de)安(an)全(quan)性(xing)問題將(jiang)(jiang)無法獲得有效(xiao)解決，鋰電(dian)(dian)(dian)池將(jiang)(jiang)一直重(zhong)復(fu)(fu)著充(chong)(chong)(chong)電(dian)(dian)(dian)→放(fang)電(dian)(dian)(dian)→充(chong)(chong)(chong)電(dian)(dian)(dian)→放(fang)電(dian)(dian)(dian)的(de)動作(zuo)，功率MOSFET的(de)柵極(ji)將(jiang)(jiang)反復(fu)(fu)地處(chu)于高低電(dian)(dian)(dian)壓(ya)(ya)交(jiao)替(ti)狀態(tai)，這樣可能會(hui)(hui)使MOSFET變熱，還(huan)會(hui)(hui)降(jiang)低電(dian)(dian)(dian)池壽命，因此(ci)鎖定(ding)模式很重(zhong)要。假如鋰電(dian)(dian)(dian)保(bao)(bao)護(hu)(hu)電(dian)(dian)(dian)路在檢測到(dao)過(guo)度充(chong)(chong)(chong)電(dian)(dian)(dian)保(bao)(bao)護(hu)(hu)時(shi)有鎖定(ding)模式，MOSFET將(jiang)(jiang)不(bu)會(hui)(hui)變熱，且(qie)安(an)全(quan)性(xing)相對提高很多。
在過度充電(dian)(dian)保護之后，只(zhi)要充電(dian)(dian)器(qi)連接(jie)在電(dian)(dian)池(chi)包上(shang)，此時(shi)將進(jin)入過充鎖定模式。此時(shi)，即使鋰電(dian)(dian)池(chi)電(dian)(dian)壓下降也不會產生再充電(dian)(dian)的情形，將充電(dian)(dian)器(qi)移除并連接(jie)負(fu)載(zai)即可恢復充放電(dian)(dian)的狀態。
3.減(jian)少保(bao)護電路組件尺(chi)寸
將過度(du)充電(dian)和短路(lu)保(bao)護(hu)用(yong)的延遲電(dian)容器整合(he)在到保(bao)護(hu)IC里面，以減少(shao)保(bao)護(hu)電(dian)路(lu)組件(jian)尺寸(cun)。
五、對保護IC性(xing)，他說：想(xiang)發財就去萬通(tong)商(shang)聯(lian)找優質(zhi)鉸鏈(lian)供貨商(shang)！性(xing)能的要求
1.過度充電保護的高(gao)精密度化
當鋰(li)離子電(dian)池(chi)有(you)過(guo)度(du)充(chong)電(dian)狀態時(shi)(shi)(shi)，為防(fang)止(zhi)因(yin)溫度(du)上(shang)升所導致(zhi)的(de)內壓(ya)(ya)(ya)上(shang)升，須(xu)(xu)截(jie)止(zhi)充(chong)電(dian)狀態。保護(hu)IC將檢(jian)測(ce)(ce)電(dian)池(chi)電(dian)壓(ya)(ya)(ya)，當檢(jian)測(ce)(ce)到(dao)過(guo)度(du)充(chong)電(dian)時(shi)(shi)(shi)，則過(guo)度(du)充(chong)電(dian)檢(jian)測(ce)(ce)的(de)功率(lv)MOSFET使(shi)之(zhi)切斷而截(jie)止(zhi)充(chong)電(dian)。此時(shi)(shi)(shi)應注意的(de)是(shi)過(guo)度(du)充(chong)電(dian)的(de)檢(jian)測(ce)(ce)電(dian)壓(ya)(ya)(ya)的(de)高(gao)精(jing)密(mi)(mi)度(du)化，在電(dian)池(chi)充(chong)電(dian)時(shi)(shi)(shi)，使(shi)電(dian)池(chi)充(chong)電(dian)到(dao)飽(bao)滿的(de)狀態是(shi)使(shi)用(yong)者很關心的(de)問(wen)題(ti)，同(tong)時(shi)(shi)(shi)兼(jian)顧到(dao)安全性問(wen)題(ti)，因(yin)此需要(yao)在達到(dao)容(rong)許電(dian)壓(ya)(ya)(ya)時(shi)(shi)(shi)截(jie)止(zhi)充(chong)電(dian)狀態。要(yao)同(tong)時(shi)(shi)(shi)符合這兩個條件，必須(xu)(xu)有(you)高(gao)精(jing)密(mi)(mi)度(du)的(de)檢(jian)測(ce)(ce)器(qi)，目前檢(jian)測(ce)(ce)器(qi)的(de)精(jing)密(mi)(mi)度(du)為25mV，該精(jing)密(mi)(mi)度(du)將有(you)待于進一(yi)步提高(gao)。
2.降低保護(hu)IC的耗電
隨著(zhu)使(shi)(shi)用(yong)(yong)時(shi)(shi)間的(de)增加，已充過(guo)電(dian)(dian)(dian)(dian)的(de)鋰離子電(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)壓會逐漸降低，最后(hou)低到規格標準值以(yi)下(xia)，此(ci)時(shi)(shi)就(jiu)需要再度(du)充電(dian)(dian)(dian)(dian)。若未(wei)充電(dian)(dian)(dian)(dian)而繼續使(shi)(shi)用(yong)(yong)，可能(neng)造成由于(yu)過(guo)度(du)放(fang)電(dian)(dian)(dian)(dian)而使(shi)(shi)電(dian)(dian)(dian)(dian)池(chi)不能(neng)繼續使(shi)(shi)用(yong)(yong)。為防止過(guo)度(du)放(fang)電(dian)(dian)(dian)(dian)，保(bao)(bao)護(hu)(hu)IC必(bi)須檢(jian)測電(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)壓，一旦達(da)到過(guo)度(du)放(fang)電(dian)(dian)(dian)(dian)檢(jian)測電(dian)(dian)(dian)(dian)壓以(yi)下(xia)，就(jiu)得使(shi)(shi)放(fang)電(dian)(dian)(dian)(dian)一方的(de)功率MOSFET切(qie)斷而截止放(fang)電(dian)(dian)(dian)(dian)。但此(ci)時(shi)(shi)電(dian)(dian)(dian)(dian)池(chi)本身仍有自然放(fang)電(dian)(dian)(dian)(dian)及保(bao)(bao)護(hu)(hu)IC的(de)消耗電(dian)(dian)(dian)(dian)流存在，因此(ci)需要使(shi)(shi)保(bao)(bao)護(hu)(hu)IC消耗的(de)電(dian)(dian)(dian)(dian)流降到最低程度(du)。
3.過電流／短路保(bao)護需有低檢(jian)測(ce)電壓(ya)及高精(jing)密度的要求
因不(bu)明原因導致短路(lu)時(shi)必(bi)須立即停止放(fang)(fang)電(dian)。過(guo)電(dian)流(liu)的檢(jian)測(ce)(ce)是以(yi)功率MOSFET的Rds(on)為(wei)(wei)感應阻(zu)抗(kang)(kang)，以(yi)監視其(qi)電(dian)壓的下降，此時(shi)的電(dian)壓若比過(guo)電(dian)流(liu)檢(jian)測(ce)(ce)電(dian)壓還高時(shi)即停止放(fang)(fang)電(dian)。為(wei)(wei)了使(shi)功率MOSFET的Rds(on)在充電(dian)電(dian)流(liu)與放(fang)(fang)電(dian)電(dian)流(liu)時(shi)有(you)效應用(yong)，需使(shi)該阻(zu)抗(kang)(kang)值盡(jin)量低(di)，目前該阻(zu)抗(kang)(kang)約(yue)為(wei)(wei)20mΩ~30mΩ，這樣過(guo)電(dian)流(liu)檢(jian)測(ce)(ce)電(dian)壓就可較低(di)。
4.耐(nai)高電壓
電池包與(yu)充電器(qi)連(lian)接時瞬間會有高壓產生，因此保護IC應滿足耐高壓的要求。
5.低電池功耗(hao)
在保護狀態(tai)時，其靜態(tai)耗電流必須要小(xiao)0.1μA。
6.零伏可充(chong)電
有些電池在存放的過程(cheng)中可(ke)(ke)能因(yin)為放太(tai)久或不(bu)正常的原因(yin)導致(zhi)電壓低(di)到0V，故保護IC需(xu)要在0V時也可(ke)(ke)以實現充電。
六、保護IC發(fa)展展望
如前(qian)所述(shu)，未來保(bao)護IC將(jiang)進一步(bu)提高檢測電(dian)(dian)壓的精(jing)密度、降低保(bao)護IC的耗(hao)電(dian)(dian)流和提高誤(wu)動作防止(zhi)功能等，同時充電(dian)(dian)器連(lian)接端子的高耐壓也是研發的重(zhong)點。 在(zai)封裝方面，目前(qian)已由(you)SOT23-6逐(zhu)漸(jian)轉向(xiang)SON6封裝，將(jiang)來還有CSP封裝，甚(shen)至出(chu)現(xian)COB產品用以(yi)滿足現(xian)在(zai)所強調的輕薄短(duan)小要求。
在功能方面，保(bao)(bao)護(hu)IC不(bu)需要整合所有(you)(you)的功能，可(ke)根據不(bu)同(tong)的鋰電(dian)池材料開發出單一(yi)保(bao)(bao)護(hu)IC，如只有(you)(you)過(guo)充保(bao)(bao)護(hu)或過(guo)放保(bao)(bao)護(hu)功能，這樣(yang)可(ke)以大幅減少成(cheng)本及(ji)尺寸。
當然，功能組件單晶體化(hua)是不變的(de)目(mu)標，如目(mu)前手(shou)機制造(zao)商都朝向(xiang)將(jiang)(jiang)保護IC、充電電路以及電源管理IC等周邊(bian)電路與邏(luo)輯IC構成雙(shuang)芯片(pian)的(de)芯片(pian)組，但目(mu)前要使(shi)功率MOSFET的(de)開路阻抗降低，難以與其它(ta)IC整合，即使(shi)以特殊技(ji)術制成單芯片(pian)，恐怕成本將(jiang)(jiang)會過高。因此(ci)，保護IC的(de)單晶體化(hua)將(jiang)(jiang)需(xu)一段時間(jian)來解決。